Formation of low resistivity ohmic contacts to n-type 3C-SiC

Epitaxial growth and electric characteristics of cubic SiC on silicon

Shigehiro Nishino, H. Suhara, H. Ono et al. · Journal of Applied Physics · 1987 · 215 citations

Materials Engineering, Materials Science, Electrical Engineering +11

The Physics of Ohmic Contacts to SiC

J. Crofton, Lisa M. Porter, John R. Williams · physica status solidi (b) · 1997 · 193 citations

Materials Science, Semiconductor Technology, Electrical Engineering +9

Growth of crystalline 3C-SiC on Si at reduced temperatures by chemical vapor deposition from silacyclobutane

A. J. Steckl, Cailei Yuan, J. P. Li et al. · Applied Physics Letters · 1993 · 78 citations

Materials Science, Sic Growth Rate, Engineering +8

beta -SiC/Si heterojunction bipolar transistors with high current gain

T. Sugii, Takashi Ito, Y. Furumura et al. · IEEE Electron Device Letters · 1988 · 78 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +13

Fabrication of inversion-type n-channel MOSFET's using cubic-SiC on Si

Kentaro Shibahara, Toshiharu Saito, S. Nishino et al. · IEEE Electron Device Letters · 1986 · 75 citations

Semiconductor Technology, Electrical Engineering, Engineering +6