Applied Physics Letters · 1988 · 59 citations · 6 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsDopingField-effect TransistorsIii-v SemiconductorsSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor SurfacesChannel DopingCurrent-voltage RelationsDepletion-mode TransistorsFermi LevelFermi Level PinningFermi SurfaceHeterostructure Field-effect TransistorsMolecular Beam Epitaxy
The fabrication and current-voltage characteristics of the first depletion-mode field-effect transistors based on a pseudomorphic ZnSe/n-GaAs heterointerface are described. The devices are doped-channel field-effect transistors produced by means of interrupted growth with the use of two separate molecular beam epitaxy systems. Very strong (visible to the naked eye) reflection high-energy electron diffraction intensity oscillations persist for 120 periods when ZnSe is nucleated on the GaAs epilayer. The current-voltage characteristics of the transistors are close to ideal; channel modulation indicates that the Fermi level is not pinned at the ZnSe/GaAs interface.
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