Japanese Journal of Applied Physics · 1989 · 65 citations · 6 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor InterfacesSemiconductor SurfacesWide Band Gap SemiconductorsWide-bandgap SemiconductorsBand GapInterface DensityInterface StatesPassivation TechniquesResistive Heating EffectsSemiconductor Surface PreparationSurface State Density ReductionSurface States
MIS capacitors have been fabricated on (NH 4 ) 2 S x -treated GaAs using a SiO x insulator prepared by conventional resistive-heating evaporation. The MIS interface state density was found to be about 1.2×10 11 cm -2 ·eV -1 in a wide range of the band gap, which is two orders of magnitude less than that on the as-etched GaAs.
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