Photoreflectance spectroscopy for the study of GaAsSb/InP heterojunction bipolar transistors

Modulation spectroscopy of semiconductors: bulk/thin film, microstructures, surfaces/interfaces and devices

Fred H. Pollak, H. Shen · Materials Science and Engineering R Reports · 1993 · 370 citations

Materials Science, Semiconductors, Ii-vi Semiconductor +7

Franz–Keldysh oscillations originating from a well-controlled electric field in the GaAs depletion region

Chris Van Hoof, J. De Boeck, D. J. Arent et al. · Applied Physics Letters · 1989 · 179 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +13

300 GHz InP/GaAsSb/InP double HBTs with high current capability and BV/sub CEO/>6 V

M.W. Dvorak, C. R. Bolognesi, O. J. Pitts et al. · IEEE Electron Device Letters · 2001 · 170 citations

Electrical Engineering, Mocvd-grown Npn Inp/gaassb/inp, Engineering +13

Type II photoluminescence and conduction band offsets of GaAsSb/InGaAs and GaAsSb/InP heterostructures grown by metalorganic vapor phase epitaxy

Jonathan Hu, Xinji Xu, J. A. H. Stotz et al. · Applied Physics Letters · 1998 · 148 citations

Optical Materials, Ingaas Layer Thickness, Engineering +19

Generalized Franz-Keldysh theory of electromodulation

H. Shen, Fred H. Pollak · Physical review. B, Condensed matter · 1990 · 147 citations

Electromagnetic Measurements, Electrical Engineering, Engineering +8