Gallium sulfide thin film grown on GaAs(1 0 0) by microwave glow discharge

A semiautomatic algorithm for rutherford backscattering analysis

Lawrence Doolittle · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1986 · 1K citations

Natural Sciences, Earth Sciences, Physics +8

Dramatic enhancement in the gain of a GaAs/AlGaAs heterostructure bipolar transistor by surface chemical passivation

C. J. Sandroff, R.N. Nottenburg, J.C. Bischoff et al. · Applied Physics Letters · 1987 · 722 citations

Engineering, Electrical Engineering, Materials Science +17

Effects of Na2S and (NH4)2S edge passivation treatments on the dark current-voltage characteristics of GaAs <i>p</i> <i>n</i> diodes

M. S. Carpenter, M. R. Melloch, Mark Lundstrom et al. · Applied Physics Letters · 1988 · 192 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Metal-Dependent Schottky Barrier Height with the (NH₄)₂S_x-Treated GaAs

Jia-Fa Fan, Haruhiro Oigawa, Yasuo Nannichi · Japanese Journal of Applied Physics · 1988 · 147 citations

Engineering, Electrical Engineering, Materials Science +17

Schottky barrier formation on (NH4)2S-treated <i>n</i>- and <i>p</i>-type (100)GaAs

M. S. Carpenter, M. R. Melloch, T.E. Dungan · Applied Physics Letters · 1988 · 140 citations

Engineering, Materials Engineering, Materials Science +17