Mg acceptors in GaN: Dependence of the g-anisotropy on the doping concentration

P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)

Hiroshi Amano, M. Kito, Kazumasa Hiramatsu et al. · Japanese Journal of Applied Physics · 1989 · 2K citations · Full text

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Origin of defect-related photoluminescence bands in doped and nominally undoped GaN

U. Kaufmann, M. Kunzer, H. Obloh et al. · Physical review. B, Condensed matter · 1999 · 276 citations

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Dynamics of the Optical-Pumping Cycle of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>F</mml:mi></mml:math>Centers in Alkali Halides-Theory and Application to Detection of Electron-Spin and Electron-Nuclear-Double-Spin Resonance in the Relaxed-Excited State

L. F. Mollenauer, Sheng Pan · Physical review. B, Solid state · 1972 · 107 citations

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Ordering in bulk GaN:Mg samples: defects caused by Mg doping

Z. Liliental‐Weber, Mourad Benamara, W. Swider et al. · Physica B Condensed Matter · 1999 · 42 citations

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