Surface orientation dependence of growth rate of cubic GaN

Epitaxial growth of zinc blende and wurtzitic gallium nitride thin films on (001) silicon

Ting Lei, M. Fanciulli, R. J. Molnar et al. · Applied Physics Letters · 1991 · 371 citations

Engineering, Materials Engineering, Materials Science +17

Growth of cubic phase gallium nitride by modified molecular-beam epitaxy

Michael J. Paisley, Zlatko Sitar, J. B. Posthill et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1989 · 362 citations

Engineering, Materials Engineering, Materials Science +17

An investigation of the properties of cubic GaN grown on GaAs by plasma-assisted molecular-beam epitaxy

S. Strite, J. Ruan, Z. Li et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1991 · 328 citations

Engineering, Materials Science, Physics +17

Low Temperature Growth of GaN and AlN on GaAs Utilizing Metalorganics and Hydrazine

M. Mizuta, Shinji Fujieda, Yoshishige Matsumoto et al. · Japanese Journal of Applied Physics · 1986 · 243 citations

Engineering, Materials Engineering, Materials Science +17

Epitaxial growth of cubic and hexagonal GaN on GaAs by gas-source molecular-beam epitaxy

Hajime Okumura, S. Misawa, S. Yoshida · Applied Physics Letters · 1991 · 226 citations

Engineering, Materials Engineering, Materials Science +17