A method to determine the strain of the AlGaN barrier layer under the gate in AlGaN/AlN/GaN heterostructure field-effect transistors

Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures

O. Ambacher, J. Smart, J. R. Shealy et al. · Journal of Applied Physics · 1999 · 2.9K citations

Engineering, Materials Engineering, Materials Science +17

Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures

O. Ambacher, B. E. Foutz, J. Smart et al. · Journal of Applied Physics · 2000 · 1.7K citations

Engineering, Materials Science, Physics +17

Strain-related phenomena in GaN thin films

C. Kisielowski, Joachim Krüger, S. Ruvimov et al. · Physical review. B, Condensed matter · 1996 · 886 citations

Natural Sciences, Materials Engineering, Materials Science +17

Evidence for nonlinear macroscopic polarization in III–V nitride alloy heterostructures

Vincenzo Fiorentini, Fabio Bernardini, O. Ambacher · Applied Physics Letters · 2002 · 840 citations

Natural Sciences, Materials Science, Physics +17

Measurement of piezoelectrically induced charge in GaN/AlGaN heterostructure field-effect transistors

Edward T. Yu, G.J. Sullivan, P.M. Asbeck et al. · Applied Physics Letters · 1997 · 362 citations

Engineering, Electrical Engineering, Materials Science +17