Evaluation of the nanoindentation behaviors of SiGe epitaxial layer on Si substrate

An improved technique for determining hardness and elastic modulus using load and displacement sensing indentation experiments

W. C. Oliver, George M. Pharr · Journal of materials research/Pratt's guide to venture capital sources · 1992 · 26.6K citations

Natural Sciences, Materials Engineering, Materials Science +16

Effects of the substrate on the determination of thin film mechanical properties by nanoindentation

Ranjana Saha, William D. Nix · Acta Materialia · 2002 · 1.5K citations

Natural Sciences, Materials Engineering, Materials Science +11

Strain relaxation kinetics in Si1−<i>x</i>Ge<i>x</i>/Si heterostructures

D. C. Houghton · Journal of Applied Physics · 1991 · 386 citations

Natural Sciences, Materials Science, Physics +17

Modulation doping in Ge<i>x</i>Si1−<i>x</i>/Si strained layer heterostructures

R. People, J. C. Bean, D. V. Lang et al. · Applied Physics Letters · 1984 · 302 citations

Engineering, Materials Engineering, Materials Science +17

Mechanism and conditions for anomalous strain relaxation in graded thin films and superlattices

F. K. LeGoues, B.S. Meyerson, J. F. Morar et al. · Journal of Applied Physics · 1992 · 267 citations

Natural Sciences, Materials Science, Physics +17