Chun‐Hu Cheng - Concepedia

Author

Chun‐Hu Cheng

National Taiwan Normal University

Also Known As

Chun-Hu Cheng, Chun‐Hu Cheng

122

Publications

1.4K

Citations

H-Index

Concepts

All Affiliations

National Taiwan Normal University National Yang Ming Chiao Tung University National Taipei University of Technology Research Center for Applied Science, Academia Sinica Xiamen University

About

Chun‐Hu Cheng is an author at National Taiwan Normal University specializing in engineering, electrical engineering, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	19	37	1.1K
2	Applied Physics	18	30	1K
3	Natural Sciences	2	2	68
4	Computer Engineering	2	2	45
5	Chemistry	1	1	36

Chun‐Hu Cheng

Publications

1.2K

Citations

H-Index

Page 1

	Year	Citations
Low‐Power High‐Performance Non‐Volatile Memory on a Flexible Substrate with Excellent Endurance Chun‐Hu Cheng, Fon‐Shan Yeh, Albert Chin Advanced Materials Non-volatile MemoryEngineeringReset PowersEmerging Memory TechnologyElectronic Devices	2010	137
Low-Leakage-Current DRAM-Like Memory Using a One-Transistor Ferroelectric MOSFET With a Hf-Based Gate Dielectric Chun‐Hu Cheng, Albert Chin IEEE Electron Device Letters Non-volatile MemoryEngineeringEmerging Memory TechnologyFerroelectric Random-access MemoryNs Switching Time	2014	131
A Flexible IGZO Thin-Film Transistor With Stacked ${\rm TiO}_{2}$-Based Dielectrics Fabricated at Room Temperature Hsiao‐Hsuan Hsu, Chun‐Yen Chang, Chun‐Hu Cheng IEEE Electron Device Letters Low Threshold VoltageEngineeringTrilayer Gate DielectricThin Film Process TechnologySemiconductor Device	2013	109
High Mobility Bilayer Metal–Oxide Thin Film Transistors Using Titanium-Doped InGaZnO Hsiao‐Hsuan Hsu, Chun‐Yen Chang, Chun‐Hu Cheng, IEEE Electron Device Letters Materials ScienceIgzo Thickness ModulationElectrical EngineeringElectronic DevicesEngineering	2014	64
Influence of plasma fluorination on p -type channel tin-oxide thin film transistors Po-Chun Chen, Yu-Chien Chiu, Zhi-Wei Zheng, Journal of Alloys and Compounds Electrical EngineeringEngineeringOxide ElectronicsApplied PhysicsPlasma Fluorination	2016	46
Investigation of strain-induced phase transformation in ferroelectric transistor using metal-nitride gate electrode Yu-Chien Chiu, Chun‐Hu Cheng, Chun‐Yen Chang, physica status solidi (RRL) - Rapid Research Letters EngineeringFerroelectric Random-access MemoryPhase Change MemorySemiconductor DeviceStrain-induced Phase Transformation	2017	36
Effect of Plasma Fluorination in p-Type SnO TFTs: Experiments, Modeling, and Simulation Kadiyam Rajshekar, Hsiao‐Hsuan Hsu, Uma Mahendra Kumar Koppolu, IEEE Transactions on Electron Devices EngineeringThin Film Process TechnologyChemistrySemiconductor DeviceSemiconductors	2019	36
Low power 1T DRAM/NVM versatile memory featuring steep sub-60-mV/decade operation, fast 20-ns speed, and robust 85&#x00B0;C-extrapolated 10<sup>16</sup> endurance Yu‐Chien Chiu, Chun‐Hu Cheng, Chun‐Yen Chang, Non-volatile MemoryEngineeringMemory DesignEmerging Memory TechnologyMemory Application	2015	33
Influence of CaCO3 and SiO2 additives on magnetic properties of M-type Sr ferrites Ching-Chien Huang, Ai-Hua Jiang, Yung-Hsiung Hung, Journal of Magnetism and Magnetic Materials Materials EngineeringMagnetismMagnetic PropertiesFerromagnetismMaterials Science	2017	32
Fully room-temperature IGZO thin film transistors adopting stacked gate dielectrics on flexible polycarbonate substrate Hsiao‐Hsuan Hsu, Chun–Yen Chang, Chun‐Hu Cheng, Solid-State Electronics Electrical EngineeringStacked Gate DielectricsEngineeringFlexible Polycarbonate SubstrateFlexible Electronics	2013	29

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