1c:I[419806,["/_next/static/chunks/bb923814e1f4d2e9.js","/_next/static/chunks/dd3ee9f5b7716ca6.js","/_next/static/chunks/4204a0ae82542ca8.js","/_next/static/chunks/30036bedc5269936.js","/_next/static/chunks/6e1aa89a642f40be.js","/_next/static/chunks/cd5e572bc3e4eb92.js","/_next/static/chunks/8ffd0b71567920d8.js","/_next/static/chunks/67ea6dfd21f16c5f.js","/_next/static/chunks/24eb4379f68013fd.js","/_next/static/chunks/b8cd775ffdf935bd.js","/_next/static/chunks/983103cd9eb7b428.js","/_next/static/chunks/d4ac9dcf27f6ff52.js","/_next/static/chunks/294b9525248c8e5f.js"],"default"] 1d:T417,Here, we report the fabrication of nanoscale (15 nm) fully transparent p-type SnO thin film transistors (TFT) at temperatures as low as 180 °C with record device performance. Specifically, by carefully controlling the process conditions, we have developed SnO thin films with a Hall mobility of 18.71 cm(2) V(-1) s(-1) and fabricated TFT devices with a linear field-effect mobility of 6.75 cm(2) V(-1) s(-1) and 5.87 cm(2) V(-1) s(-1) on transparent rigid and translucent flexible substrates, respectively. These values of mobility are the highest reported to date for any p-type oxide processed at this low temperature. We further demonstrate that this high mobility is realized by careful phase engineering. Specifically, we show that phase-pure SnO is not necessarily the highest mobility phase; instead, well-controlled amounts of residual metallic tin are shown to substantially increase the hole mobility. A detailed phase stability map for physical vapor deposition of nanoscale SnO is constructed for the first time for this p-type oxide.1e:T478,The fabrication process and the characteristics of bottom-gate Ga ₂ O ₃ -In ₂ O ₃ -ZnO (GIZO) thin-film transistors (TFTs) are reported in detail. Experimental results show that oxygen supply during the deposition of GIZO active layer and silicon oxide passivation layer controls the threshold voltage of the TFT. The field-effect mobility and the threshold voltage of the GIZO TFT fabricated under the optimum process conditions are 2.6 cm ² /V ldr s and 3.8 V, respectively. A 4-in QVGA active-matrix organic light-emitting diode display driven by the GIZO TFTs without any compensation circuit in the pixel is successfully demonstrated.1f:T483,Abstract Tin monoxide (SnO) is a stable p‐type oxide semiconductor. This paper reports electrical properties, electronic structures, and thin‐film transistors (TFTs) of SnO. Epitaxial films were fabricated by pulsed laser deposition. The Hall mobility and the hole density of the epitaxial films were 2.4 cm 2 V −1 s −1 and 2.5 × 10 17 , respectively. X‐ray photoelectron spectroscopy (PES) indicated that the closed‐shell 5s 2 orbitals of Sn 2+ ions heavily contribute to the hole conduction path in SnO. Top gate type TFTs ( W / L = 300/50 µm) employing 20 nm thick SnO channels exhibited field‐effect mobilities µ sat = 0.7 cm 2 V −1 s −1 and µ lin = 1.3 cm 2 V −1 s −1 , which are larger by two orders of magnitude than those reported for p‐channel oxide TFTs to date. On/off current ratios were ∼10 2 and subthreshold voltage swings ( S ) ∼7 V/decade. The parameters required for TFT simulations were estimated by ultraviolet PES and first‐principles calculations. The TFT simulations indicated that subgap hole trap density in the SnO channel is >10 19 cm −3 , which limits the TFT mobilities and the S values.

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