Hot-implantation of nitrogen donors into p- type α-SiC and characterization of n+-p junction

ARXPS studies of SiO₂-SiC interfaces and oxidation of 6H SiC single crystal Si-(001) and C-(00<ovl>1</ovl>) surfaces

B. Hornetz, H-J. Michel, J. Halbritter · Journal of materials research/Pratt's guide to venture capital sources · 1994 · 276 citations

Natural Sciences, Materials Engineering, Materials Science +14

Chemical vapor deposition and characterization of 6H-SiC thin films on off-axis 6H-SiC substrates

Hoyoul Kong, Jeffrey T. Glass, R. F. Davis · Journal of Applied Physics · 1988 · 216 citations

Engineering, Materials Engineering, Materials Science +17

Characterization and optimization of the SiO2/SiC metal-oxide semiconductor interface

J. N. Shenoy, G. Chindalore, M. R. Melloch et al. · Journal of Electronic Materials · 1995 · 161 citations

Engineering, Materials Engineering, Materials Science +12

Contact resistance measurements on <i>p</i>-type 6H-SiC

J. Crofton, P. A. Barnes, John R. Williams et al. · Applied Physics Letters · 1993 · 124 citations

Engineering, Electrical Engineering, Materials Science +17

High-quality 4H-SiC homoepitaxial layers grown by step-controlled epitaxy

Akira Itoh, Hironobu Akita, Tsunenobu Kimoto et al. · Applied Physics Letters · 1994 · 92 citations

Natural Sciences, Materials Engineering, Materials Science +17