Morio Inoue

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Active since

1966

Affiliations

Morio Inoue is an author at Ion Technology Center (Japan) specializing in semiconductor materials, materials science, and semiconductor device materials.

Publications per year

1966–1997

Publications

Molybdenum-Silicon Schottky Barrier

G. Kano, Morio Inoue, Jin-ichi Matsuno et al. · Journal of Applied Physics · 1966 · 25 citations

Engineering, Electrical Engineering, Materials Science +17

Hot-implantation of nitrogen donors into p- type α-SiC and characterization of n+-p junction

Naoya Inoue, Akira Itoh, Tsunenobu Kimoto et al. · Journal of Electronic Materials · 1997 · 20 citations

Engineering, Materials Engineering, Materials Science +16

Mapping of Vanadium-Related Luminescence on SiC Wafer at Room Temperature

Michio Tajima, Yoshikazu Kumagaya, Toshitake Nakata et al. · Japanese Journal of Applied Physics · 1997 · 13 citations

Engineering, Materials Engineering, Materials Science +15

Formation of an ohmic electrode in SiC using a pulsed laser irradiation method

Osamu Eryu, Takayuki Kume, Kenshiro Nakashima et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1997 · 10 citations

Engineering, Materials Engineering, Materials Science +14

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