Applied Physics Letters · 1993 · 124 citations · 10 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsElectronic Material CharacterizationSemiconductor Device MaterialsSemiconductor InterfacesSemiconductor PhysicsSemiconductor SurfacesSemiconductor Thin FilmsContact ResistanceContact Resistance MeasurementElectrical Contact ResistanceOhmic ContactsSemiconductor CharacterizationSheet ResistanceSheet Resistance MeasurementSilicon Carbide (Sic) Materials
Specific contact resistance measurements are reported for Al-Ti ohmic contacts to epitaxial p-type 6H-SiC as a function of epitaxial doping. The circular transmission line method was used to measure the specific contact resistance including the sheet resistance of the epitaxial layer and the modified sheet resistance under the contact. Epitaxial layers with Al doping between 5.5×1015 and 2×1019 cm−3 yielded specific contact resistances between 2.9×10−2 and 1.5×10−5 Ω cm2. A good theoretical fit to the contact resistance data was obtained by assuming the metal-6H-SiC barrier height to equal 0.37 eV.
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