Fabrication of diamond MISFET with micron-sized gate length on boron-doped (111) surface

Growth and characterization of phosphorous doped {111} homoepitaxial diamond thin films

Satoshi Koizumi, M. Kamo, Yoichiro Sato et al. · Applied Physics Letters · 1997 · 544 citations

Natural Sciences, Materials Science, Physics +17

Study of the effect of hydrogen on transport properties in chemical vapor deposited diamond films by Hall measurements

Kazushi Hayashi, Sadanori Yamanaka, Hideyo Okushi et al. · Applied Physics Letters · 1996 · 228 citations

Natural Sciences, Materials Science, Physics +17

High-temperature point-contact transistors and Schottky diodes formed on synthetic boron-doped diamond

M. W. Geis, D.D. Rathman, D. J. Ehrlich et al. · IEEE Electron Device Letters · 1987 · 218 citations

Engineering, Electrical Engineering, Materials Science +17

The effect of surface treatment on the electrical properties of metal contacts to boron-doped homoepitaxial diamond film

Stephen Grot, G. Gildenblat, C. W. Hatfield et al. · IEEE Electron Device Letters · 1990 · 197 citations

Engineering, Materials Engineering, Materials Science +17

Enhancement mode metal-semiconductor field effect transistors using homoepitaxial diamonds

Hiroshi Kawarada, Makoto Aoki, Masahiro Ito · Applied Physics Letters · 1994 · 178 citations

Engineering, Electrical Engineering, Materials Science +17