IEEE Electron Device Letters · 1987 · 218 citations · 4 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsDopingField-effect TransistorsHigh-temperature MaterialsSemiconductor Device MaterialsSemiconductor PhysicsWide-bandgap Semiconductor DevicesDiamond Semiconductor DevicesDiamond SemiconductorsGainHigh-temperature Device OperationHigh-temperature ElectronicsPower GainSchottky BarriersSchottky Contacts
Point-contact transistors and Schottky diodes have been formed on synthetic boron-doped diamond. This is the first report of diamond transistors that have power gain. Further, the transistors exhibited power gain at 510°C and the Schottky diodes were operational at 700°C.
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Diamond synthesis from gas phase in microwave plasma
Mutsukazu Kamo, Yoichiro Sato, Seiichiro Matsumoto et al. · Journal of Crystal Growth · 1983 · 964 citations