R.A. Murphy

High-temperature point-contact transistors and Schottky diodes formed on synthetic boron-doped diamond

M. W. Geis, D.D. Rathman, D. J. Ehrlich et al. · IEEE Electron Device Letters · 1987 · 217 citations

Semiconductor Technology, High-temperature Point-contact Transistors, Electrical Engineering +11

SOI gated resistor: CMOS without junctions

J.-P. Colinge, Christopher Lee, Aryan Afzalian et al. · 2009 · 155 citations

Semiconductor Technology, Electrical Engineering, Engineering +10

Corrosion effects in thin‐film photovoltaic modules

David Carlson, R. Romero, F. Willing et al. · Progress in Photovoltaics Research and Applications · 2003 · 72 citations

Engineering, Thin Film Process Technology, Photovoltaics +16

Space charge effects on the current-voltage characteristics of gated field emitter arrays

Kevin L. Jensen, M.A. Kodis, R.A. Murphy et al. · Journal of Applied Physics · 1997 · 49 citations

Device Modeling, Electrical Engineering, Electronic Devices +12

High-efficiency ion-implanted lo-hi-lo GaAs IMPATT diodes

C. O. Bozler, J.P. Donnelly, R.A. Murphy et al. · Applied Physics Letters · 1976 · 49 citations · Full text

Semiconductors, Semiconductor Technology, Electrical Engineering +10