Current and potential characterization on InAs nanowires by contact-mode atomic force microscopy and Kelvin probe force microscopy

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J. M. Moison, F. Houzay, F. Barthe et al. · Applied Physics Letters · 1994 · 928 citations

Natural Sciences, Materials Science, Physics +17

Schottky barrier height of <i>n</i>-In<i>x</i>Ga1−<i>x</i>As diodes

Kenji Kajiyama, Y. Mizushima, S. Sakata · Applied Physics Letters · 1973 · 284 citations

Engineering, Electrical Engineering, Materials Science +17

Nature of strained InAs three-dimensional island formation and distribution on GaAs(100)

A. Madhukar, Qiwei Xie, P. Chen et al. · Applied Physics Letters · 1994 · 237 citations

Natural Sciences, Materials Science, Physics +17

Molecular-beam epitaxy growth of quantum dots from strained coherent uniform islands of InGaAs on GaAs

D. Leonard, Mohan Krishnamurthy, S. Fafard et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1994 · 170 citations

Natural Sciences, Materials Science, Physics +17

Imaging and probing electronic properties of self-assembled InAs quantum dots by atomic force microscopy with conductive tip

Ichiro Tanaka, Itaru Kamiya, H. Sakaki et al. · Applied Physics Letters · 1999 · 96 citations

Natural Sciences, Materials Science, Physics +17