IEEE Transactions on Power Electronics · 2014 · 36 citations · 14 references
EngineeringElectrical EngineeringMicroelectronicsPower ElectronicsSemiconductor DevicesDevice CharacterizationDevice ReliabilityMaterial DegradationMaterial Degradation AssessmentSemiconductor ReliabilityDegradation AssessmentDegradation MonitoringDevice DegradationReliability Analysis Of Power ElectronicsReliability DegradationReliability Degradation AnalysisReliability Of Power Electronic SystemsWear
Four-point probing of electrical parameters on various components of IGBT modules is suggested as an approach for the estimation of degradation in stressed devices. By comparison of these parameters for stressed and new components one can evaluate an overall degradation of the module and find out the wear state of individual components. This knowledge can be applied for preventing early failures and for optimization of the device design. The method is presented by regarding a standard type power module subjected to power cycling.
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Resistivity Measurements on Germanium for Transistors
L. B. Valdes · Proceedings of the IRE · 1954 · 661 citations
Fast power cycling test of IGBT modules in traction application
Martin Held, P. Jacob, G. Nicoletti et al. · 2002 · 565 citations