Concepedia

L. B. Valdes

LB

Statistics

Publications

6

Citations

807

H-Index

6

Active since

1952

Affiliations

NTT (Japan)(Current)

L. B. Valdes is an author at NTT (Japan) specializing in applied physics, engineering, and electrical engineering.

Top concepts

EngineeringApplied PhysicsElectrical EngineeringMicroelectronicsPhysicsSemiconductorsNanoelectronicsElectronic DevicesElectrical InsulationDevice Modeling

Publications per year

1952–1962

6

Publications

6

Resistivity Measurements on Germanium for Transistors

L. B. Valdes · Proceedings of the IRE · 1954 · 654 citations

Semiconductors, Electrical Engineering, Semiconductor Device +15

Measurement of Minority Carrier Lifetime in Germanium

L. B. Valdes · Proceedings of the IRE · 1952 · 46 citations

Flat Face, Ii-vi Semiconductor, Semiconductor Technology +11

Handbook of semiconductor electronics

L. B. Valdes · Solid-State Electronics · 1962 · 33 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +5

Silicon <i>n-p-n</i> Grown Junction Transistors

Molly L. Tanenbaum, L. B. Valdes, E. Buehler et al. · Journal of Applied Physics · 1955 · 29 citations

Semiconductors, Materials Science, Electrical Engineering +14

Effect of Electrode Spacing on the Equivalent Base Resistance of Point-Contact Transistors

L. B. Valdes · Proceedings of the IRE · 1952 · 27 citations

Engineering, Theoretical Expression, Semiconductor Device +16

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