The erosion behaviors of Y2O3 and YF3 coatings under fluorocarbon plasma

Handbook of Semiconductor Manufacturing Technology

M. Henini · Microelectronics Journal · 2001 · 312 citations

Engineering, Manufacturing Engineering, Manufacturing Processes +11

Study of the SiO2-to-Si3N4 etch selectivity mechanism in inductively coupled fluorocarbon plasmas and a comparison with the SiO2-to-Si mechanism

M. Schaepkens, T. E. F. M. Standaert, N. R. Rueger et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1999 · 312 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Universal energy dependence of physical and ion-enhanced chemical etch yields at low ion energy

Christoph Steinbrüchel · Applied Physics Letters · 1989 · 287 citations

Natural Sciences, Materials Engineering, Materials Science +14

Role of fluorocarbon film formation in the etching of silicon, silicon dioxide, silicon nitride, and amorphous hydrogenated silicon carbide

T. E. F. M. Standaert, Christer Hedlund, Eric Joseph et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 2003 · 281 citations

Natural Sciences, Materials Engineering, Materials Science +17

Phenomenological modeling of ion-enhanced surface kinetics in fluorine-based plasma etching

David C. Gray, I. Tepermeister, Herbert H. Sawin · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1993 · 255 citations

Natural Sciences, Materials Science, Physics +17