Concepedia

I. Tepermeister

IT

6

Publications

345

Citations

6

H-Index

1992

Active since

Affiliations

Massachusetts Institute of Technology(Current)

AT&T (United States)

I. Tepermeister is an author at Massachusetts Institute of Technology specializing in engineering, applied physics, and microelectronics.

Top concepts

EngineeringApplied PhysicsMicroelectronicsPhysicsPlasma PhysicsElectrical EngineeringChemistryPlasma TheoryPlasma ScienceSurface Science

Publications per year

1992–1994

6

Publications

6

Phenomenological modeling of ion-enhanced surface kinetics in fluorine-based plasma etching

David C. Gray, I. Tepermeister, Herbert H. Sawin · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1993 · 251 citations

Chemical Kinetics, Engineering, Ion-enhanced Surface Kinetics +19

Comparison of advanced plasma sources for etching applications. I. Etching rate, uniformity, and profile control in a helicon and a multiple electron cyclotron resonance source

I. Tepermeister, N. Blayo, F. Klemens et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1994 · 28 citations

I. Etching Rate, Electrical Engineering, Polysilicon Films +13

Comparison of advanced plasma sources for etching applications. III. Ion energy distribution functions for a helicon and a multipole electron cyclotron resonance source

G. Gibson, Herbert H. Sawin, I. Tepermeister et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1994 · 18 citations

Engineering, Nuclear Physics, Plasma Science +20

Comparison of advanced plasma sources for etching applications. II. Langmuir probe studies of a helicon and a multipole electron cyclotron resonance source

I. Tepermeister, D. E. Ibbotson, J. T. C. Lee et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1994 · 18 citations

Langmuir Probe Studies, Plasma Uniformity, Engineering +20

Comparison of advanced plasma sources for etching applications. IV. Plasma induced damage in a helicon and a multipole electron cyclotron resonance source

N. Blayo, I. Tepermeister, J. L. Benton et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1994 · 16 citations

Plasma Induced Damage, Electrical Engineering, Crystalline Silicon +15

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