N. Blayo

<i>In</i> <i>situ</i> study of the growth of hydrogenated amorphous silicon by infrared ellipsometry

N. Blayo, B. Drévillon · Applied Physics Letters · 1991 · 50 citations

Materials Science, Optical Materials, Engineering +14

In situ study of the hydrogen rich overlayer at the a-Si:H surface by infrared ellipsometry

N. Blayo, B. Drévillon · Journal of Non-Crystalline Solids · 1991 · 34 citations

Surface Characterization, Engineering, Hydrogen Transition +10

Interaction between growing amorphous silicon and glass substrate evidenced by <i>in</i> <i>situ</i> infrared ellipsometry

N. Blayo, B. Drévillon · Applied Physics Letters · 1990 · 31 citations

Optical Materials, Engineering, Glass Material +16

Comparison of advanced plasma sources for etching applications. I. Etching rate, uniformity, and profile control in a helicon and a multiple electron cyclotron resonance source

I. Tepermeister, N. Blayo, F. Klemens et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1994 · 28 citations

I. Etching Rate, Electrical Engineering, Polysilicon Films +13

Infrared ellipsometry study of the oxidation mechanisms of hydrogenated amorphous silicon

N. Blayo, B. Drévillon · Surface Science · 1992 · 23 citations

Materials Science, Engineering, Oxidation Mechanisms +8