Applied Physics Letters · 2010 · 40 citations · 17 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsSemiconductor DevicesMemory DevicesMetal-oxide-semiconductor Field-effect TransistorsOxide SemiconductorsSemiconductor Device MaterialsSemiconductor Thin FilmsThin-film TransistorsAmorphous Indium Gallium Zinc OxideFerroelectric Field-effect TransistorsFerroelectric SemiconductorsGallium OxideMemory MaterialsNanoelectronic Memory DevicesNon-volatile Ferroelectric MemorySubthreshold Swing
We characterized the nonvolatile memory thin-film transistors, which was composed of an amorphous indium-gallium-zinc oxide (α-IGZO) active channel and a ferroelectric poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] gate insulator, and investigated the impact of an interface controlling layer. Excellent device performances, such as the field-effect mobility of 60.9 cm2 V−1 s−1, the subthreshold swing of 120 mV/dec, and the memory window of 6.4 V at ±12 V programming, were confirmed for the device without any interface layer. However, the memory retention time was very short. The retention behaviors could be dramatically improved when 4 nm thick Al2O3 layer was introduced between the P(VDF-TrFE) and α-IGZO.
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Organic Nonvolatile Memory Transistors for Flexible Sensor Arrays
Tsuyoshi Sekitani, Tomoyuki Yokota, Ute Zschieschang et al. · Science · 2009 · 957 citations
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