Gwang-Geun Lee

The flexible non-volatile memory devices using oxide semiconductors and ferroelectric polymer poly(vinylidene fluoride-trifluoroethylene)

Gwang-Geun Lee, Eisuke Tokumitsu, Sung‐Min Yoon et al. · Applied Physics Letters · 2011 · 83 citations

Engineering, Electrical Engineering, Materials Science +17

Impact of interface controlling layer of Al2O3 for improving the retention behaviors of In–Ga–Zn oxide-based ferroelectric memory transistor

Sung‐Min Yoon, Shinhyuk Yang, Soon‐Won Jung et al. · Applied Physics Letters · 2010 · 40 citations

Engineering, Electrical Engineering, Materials Science +17

Low-Voltage Operation of Ferroelectric Gate Thin Film Transistors Using Indium Gallium Zinc Oxide-Channel and Ferroelectric Polymer Poly(vinylidene fluoride–trifluoroethylene)

Gwang-Geun Lee, Yoshihisa Fujisaki, Hiroshi Ishiwara et al. · Applied Physics Express · 2011 · 20 citations

Engineering, Electrical Engineering, Materials Science +17

The Ferroelectricity and Electrical Properties of P(VDF-TrFE) Copolymer Film

Dong‐Won Kim, Gwang-Geun Lee, Byung-Eun Park · Journal of the Korean Physical Society · 2007 · 12 citations

Natural Sciences, Materials Engineering, Materials Science +14