Applied Physics Letters · 2011 · 83 citations · 10 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesThin FilmsFerroelectric MaterialsMemory DevicesMetal-oxide-semiconductor Field-effect TransistorsOxide SemiconductorsSemiconductor Thin FilmsThin-film TransistorsAmorphous Indium Gallium Zinc OxideAmorphous Oxide SemiconductorsFerroelectric PropertiesFlexible Thin-film TransistorsNon-volatile MemoryNonvolatile MemoryNonvolatile Memory DevicesP-type Oxide Semiconductors
We demonstrated flexible ferroelectric gate thin-film transistors (Fe-TFTs) with ferroelectric polymer poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] and amorphous indium gallium zinc oxide (a-IGZO) channel on the polyethylene-naphthalate (PEN) substrate. First, we confirm basic ferroelectric properties of the P(VDF-TrFE) film on the PEN substrate with various bending radius. Next, we fabricated Fe-TFTs with Al/120 nm-P(VDF-TrFE)/40 nm-IGZO top gate structure. Excellent electrical characteristics are demonstrated and nonvolatile memory function was confirmed with a memory window of 8.4 V. A subthreshold voltage swing of 400 mV/decade, Ion/Ioff ratio of more than 107 and the field-effect mobility of ∼1 cm2/Vs were obtained.
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Low-voltage polymer field-effect transistors for nonvolatile memories
R.C.G. Naber, Bart de Boer, Paul W. M. Blom et al. · Applied Physics Letters · 2005 · 188 citations · Full text