Yoshihisa Fujisaki - Concepedia

Author

Yoshihisa Fujisaki

Hitachi (Japan)

Also Known As

Yoshihisa FUJISAKI, Yoshihisa Fujisaki, Yoshihisa Fujisaki Yoshihisa Fujisaki

Publications

1.4K

Citations

H-Index

Concepts

All Affiliations

Hitachi (Japan)Tokyo Institute of Technology

About

Yoshihisa Fujisaki is an author at Hitachi (Japan) specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	20	31	1.3K
2	Applied Physics	18	27	972
3	Chemical Engineering	7	7	353
4	Chemistry	3	3	108
5	Computer Engineering	3	3	228

Yoshihisa Fujisaki

Publications

1.3K

Citations

H-Index

Page 1

	Year	Citations
Low-voltage operation of ferroelectric poly(vinylidene fluoride-trifluoroethylene) copolymer capacitors and metal-ferroelectric-insulator-semiconductor diodes Sumiko Fujisaki, Hiroshi Ishiwara, Yoshihisa Fujisaki Applied Physics Letters Materials ScienceElectroactive MaterialElectrical EngineeringLow-voltage OperationEngineering	2007	188
Electrode-induced degradation of Pb(Zr<i>x</i>Ti1−<i>x</i>)O3 (PZT) polarization hysteresis characteristics in Pt/PZT/Pt ferroelectric thin-film capacitors Keiko Kushida-Abdelghafar, Hiroshi Miki, Kazuyoshi Torii, Applied Physics Letters Materials ScienceChemical EngineeringFerroelasticsEngineeringFerroelectric Application	1996	134
Review of Emerging New Solid-State Non-Volatile Memories Yoshihisa Fujisaki Japanese Journal of Applied Physics Hardware SecurityMagnetismElectrical EngineeringNon-volatile MemoryIntegration Limit	2013	118
Current Status of Nonvolatile Semiconductor Memory Technology Yoshihisa Fujisaki Japanese Journal of Applied Physics SpintronicsElectrical EngineeringNon-volatile MemoryEngineeringNanoelectronics	2010	84
The flexible non-volatile memory devices using oxide semiconductors and ferroelectric polymer poly(vinylidene fluoride-trifluoroethylene) Gwang-Geun Lee, Eisuke Tokumitsu, Sung‐Min Yoon, Applied Physics Letters Non-volatile MemoryEngineeringEmerging Memory TechnologyFerroelectric Random-access MemoryFerroelectric Polymer Poly	2011	83
The effects of the catalytic nature of capacitor electrodes on the degradation of ferroelectric Pb(Zr,Ti)O3 thin films during reductive ambient annealing Yoshihisa Fujisaki, Keiko Kushida-Abdelghafar, Yasuhiro Shimamoto, Journal of Applied Physics Materials EngineeringMaterials ScienceChemical EngineeringElectrical EngineeringEngineering	1997	76
Hydrogen-related Degradation and Recovery Phenomena in Pb(Zr,Ti)O<sub> 3</sub> Capacitors with a Platinum Electrode Hiroshi Miki, Keiko Kushida-Abdelghafar, Kazuyoshi Torii, Japanese Journal of Applied Physics Materials ScienceChemical EngineeringDielectric ConstantEngineeringHydrogen Annealing	1997	49
Organic Ferroelectric Diodes with Long Retention Characteristics Suitable for Non-Volatile Memory Applications Sumiko Fujisaki, Hiroshi Ishiwara, Yoshihisa Fujisaki Applied Physics Express Non-volatile MemoryEngineeringOrganic ElectronicsPmma CompositionNon-volatile Memory Applications	2008	46
Analysis of Decomposed Layer Appearing on the Surface of Barium Strontium Titanate Yoshihisa Fujisaki, Yasuhiro Shimamoto, Yūichi Matsui Japanese Journal of Applied Physics Materials ScienceSurface CharacterizationBarium OxidesBarium Strontium TitanateEngineering	1999	45
Post-annealing effects on antireduction characteristics of IrO2/Pb(ZrxTi1−x)O3/Pt ferroelectric capacitors Keiko Kushida-Abdelghafar, Masahiko Hiratani, Yoshihisa Fujisaki Journal of Applied Physics Materials EngineeringMaterials ScienceChemical EngineeringEngineeringHydrogen Annealing	1999	41

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