High‐Mobility Nonvolatile Memory Thin‐Film Transistors with a Ferroelectric Polymer Interfacing ZnO and Pentacene Channels

Abstract

Nonvolatile memory ferroelectric thin-film transistors (FeTFT) with P(VDF-TrFE) polymer are demonstrated with both n-channel ZnO and p-channel pentacene. A high mobility of ≈1 cm2 V−1 s−1 and large memory window of ≈20 V are achieved through the organic ferroelectric– inorganic channel hybrid device of ZnO-FeTFT. WRITE/ERASE states are clearly distinguished by ±20 V switching for ZnO- and pentacene-FeTFTs.