Byung-Eun Park

Formation of LaAlO3 films on Si(100) substrates using molecular beam deposition

Byung-Eun Park, Hiroshi Ishiwara · Applied Physics Letters · 2003 · 135 citations

Natural Sciences, Materials Engineering, Materials Science +17

Thirty-Day-Long Data Retention in Ferroelectric-Gate Field-Effect Transistors with HfO₂ Buffer Layers

Kazuhiro Takahashi, Koji Aizawa, Byung-Eun Park et al. · Japanese Journal of Applied Physics · 2005 · 109 citations

Natural Sciences, Electrical Engineering, Materials Science +17

Impact of HfO2 buffer layers on data retention characteristics of ferroelectric-gate field-effect transistors

Koji Aizawa, Byung-Eun Park, Yoshihito Kawashima et al. · Applied Physics Letters · 2004 · 105 citations

Engineering, Electrical Engineering, Materials Science +17

Electrical properties of LaAlO3/Si and Sr0.8Bi2.2Ta2O9/LaAlO3/Si structures

Byung-Eun Park, Hiroshi Ishiwara · Applied Physics Letters · 2001 · 97 citations

Natural Sciences, Materials Engineering, Materials Science +17

Fabrication of PbZr_xTi_1-xO₃ Films on Si Structures Using Y₂O₃ Buffer Layers

Byung-Eun Park, Shigeto Shouriki, Eisuke Tokumitsu et al. · Japanese Journal of Applied Physics · 1998 · 57 citations

Natural Sciences, Materials Engineering, Materials Science +17