Applied Physics Letters · 2009 · 471 citations · 14 references
EngineeringOrganic ElectronicsOptoelectronic DevicesThin Film Process TechnologyElectronic DevicesLight-emitting DiodesAdvanced Display TechnologyMaterials ScienceElectrical EngineeringOrganic SemiconductorPolyimide Plastic SubstratePi SubstrateWhite OledElectronic MaterialsFlexible ElectronicsSemiconducting PolymerApplied PhysicsSpatial UniformityThin FilmsOptoelectronicsThin-film Transistors
We have fabricated 6.5 in. flexible full-color top-emission active matrix organic light-emitting diode display on a polyimide (PI) substrate driven amorphous indium gallium zinc oxide thin-film transistors (a-IGZO TFTs). The a-IGZO TFTs exhibited field-effect mobility (μFE) of 15.1 cm2/V s, subthreshold slope of 0.25 V/dec, threshold voltage (VTH) of 0.9 V. The electrical characteristics of TFTs on PI substrate, including a bias-stress instability after 1 h long gate bias at 15 V, were indistinguishable from those on glass substrate and showed high degree of spatial uniformity. TFT samples on 10 μm thick PI substrate withstood bending down to R=3 mm under tension and compression without any performance degradation.
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All-organic active matrix flexible display
Lisong Zhou, Alfred Wanga, Sheng-Chu Wu et al. · Applied Physics Letters · 2006 · 594 citations