Switching characteristics of silicon carbide power PiN diodes

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C.E. Weitzel, John W. Palmour, C.H. Carter et al. · IEEE Transactions on Electron Devices · 1996 · 441 citations

Engineering, Electrical Engineering, Materials Science +17

Study of bulk and elementary screw dislocation assisted reverse breakdown in low-voltage (>250 V) 4H-SiC p/sup +/-n junction diodes. I. DC properties

Philip G. Neudeck, Wei Huang, Michael Dudley · IEEE Transactions on Electron Devices · 1999 · 157 citations

Engineering, Electrical Engineering, Materials Science +17

SiC Power Devices

T. Paul Chow, M. Ghezzo · MRS Proceedings · 1996 · 98 citations

Silicon carbide MOSFET technology

D.M. Brown, E. Downey, M. Ghezzo et al. · Solid-State Electronics · 1996 · 78 citations

Engineering, Electrical Engineering, Materials Science +12