Wei Huang

Study of bulk and elementary screw dislocation assisted reverse breakdown in low-voltage (>250 V) 4H-SiC p/sup +/-n junction diodes. I. DC properties

Philip G. Neudeck, Wei Huang, Michael Dudley · IEEE Transactions on Electron Devices · 1999 · 157 citations

Engineering, Electrical Engineering, Materials Science +17

White-beam synchrotron topographic studies of defects in 6H-SiC single crystals

Michael Dudley, Shaoping Wang, Wei Huang et al. · Journal of Physics D Applied Physics · 1995 · 111 citations

Natural Sciences, Materials Engineering, Materials Science +17

Breakdown degradation associated with elementary screw dislocations in 4H-SiC p+n junction rectifiers

Philip G. Neudeck, Wei Huang, Michael Dudley · Solid-State Electronics · 1998 · 93 citations · Full text

Engineering, Materials Engineering, Materials Science +16

Wafer-scale 4H-silicon carbide-on-insulator (4H–SiCOI) platform for nonlinear integrated optical devices

Ailun Yi, Yi Zheng, Hao Huang et al. · Optical Materials · 2020 · 75 citations · Full text

Engineering, Materials Engineering, Materials Science +16

Performance of a Vertical 4H-SiC Photoconductive Switch With AZO Transparent Conductive Window and Silver Mirror Reflector

Peng-Hui Cao, Wei Huang, Hui Guo et al. · IEEE Transactions on Electron Devices · 2018 · 49 citations

Engineering, Electrical Engineering, Materials Science +16