Wei Huang

Study of bulk and elementary screw dislocation assisted reverse breakdown in low-voltage (>250 V) 4H-SiC p/sup +/-n junction diodes. I. DC properties

Philip G. Neudeck, Wei Huang, Michael Dudley · IEEE Transactions on Electron Devices · 1999 · 157 citations

Electrical Engineering, Elementary Screw Dislocations, Engineering +15

White-beam synchrotron topographic studies of defects in 6H-SiC single crystals

Michael Dudley, Shaoping Wang, Wei Huang et al. · Journal of Physics D Applied Physics · 1995 · 109 citations

Engineering, 6H-sic Single Crystals, Defect Tolerance +19

Breakdown degradation associated with elementary screw dislocations in 4H-SiC p+n junction rectifiers

Philip G. Neudeck, Wei Huang, Michael Dudley · Solid-State Electronics · 1998 · 92 citations

Electrical Engineering, Elementary Screw Dislocations, Engineering +5

Wafer-scale 4H-silicon carbide-on-insulator (4H–SiCOI) platform for nonlinear integrated optical devices

Ailun Yi, Yi Zheng, Hao Huang et al. · Optical Materials · 2020 · 70 citations

Photonics, Electrical Engineering, Electronic Devices +13

Unravelling the Role of the Compressed Gas on Melting Point of Liquid Confined in Nanospace

Shimou Chen, Yusheng Liu, Haiying Fu et al. · The Journal of Physical Chemistry Letters · 2012 · 46 citations · Full text

Quantum Liquid, Engineering, Liquid Confined +21