Concepedia

Publication | Closed Access

Structural and chemical stability of Ta–Si–N thin film between Si and Cu

DOI

54

Citations

12

References

1998

Year

Yoon-Jik Lee, Bong-Seok Suh, Sa‐Kyun Rha, Chong-Ook Park
Thin Solid Films

References

YearCitations

Thermochemical data of pure substances

Choice Reviews Online

1993

4.5K

Transition metals in silicon

Eicke R. Weber

Applied Physics A

1983

1.2K

Tantalum as a diffusion barrier between copper and silicon: Failure mechanism and effect of nitrogen additions

Karen Holloway, P. M. Fryer, C. Cabral,

Journal of Applied Physics

1992

445

Reactively sputtered TiN as a diffusion barrier between Cu and Si

Shiqing Wang, Ivo J. Raaijmakers, Brad J. Burrow,

Journal of Applied Physics

1990

244

Thermodynamic considerations in refractory metal-silicon-oxygen systems

R. Beyers

Journal of Applied Physics

1984

243

Evaluation of amorphous (Mo, Ta, W)SiN diffusion barriers for 〈Si〉|Cu metallizations

J.S. Reid, E. Kolawa, R. Ruiz,

Thin Solid Films

1993

164

Multicarrier trapping by copper microprecipitates in silicon

A. Broniatowski

Physical Review Letters

1989

112

Ti-Si-N diffusion barriers between silicon and copper

J.S. Reid, Xin Sun, E. Kolawa,

IEEE Electron Device Letters

1994

81

W-B-N diffusion barriers for Si/Cu metallizations

J.S. Reid, R.Y. Liu, Paul Martin Smith,

Thin Solid Films

1995

42

Barrier Effect of TaSiN Layer for Oxygen Diffusion

Tohru Hara, Taira Kitamura, Masaru Tanaka,

Journal of The Electrochemical Society

1996

33

Page 1