Applied Physics Letters · 2012 · 43 citations · 10 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsCarrier TransportDevice ModelingSemiconductor HeterostructuresSemiconductor PhysicsWide Band Gap SemiconductorsWide-bandgap SemiconductorsCharge Carrier DensityCharge NeutralityCharge Transport ModelingElectron DensityElectron Density DistributionsGallium Nitride (Gan) MaterialsHeterostructuresTwo-dimensional Electron Gases
In this paper, a physics based analytical model for the bare surface barrier height and two dimensional electron gas density in AlGaN/GaN heterostructures is presented. The model is based on simple charge neutrality electrostatics across the AlGaN barrier layer and that a low density of surface donor states is the source of the two dimensional electron gas. The model shows good agreement with reported experimental results.
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