Effect of post metallization annealing on structural and electrical properties of Ge metal-oxide-semiconductor (MOS) capacitors with Pt/HfO2 gate stack

Fermi-level pinning and charge neutrality level in germanium

A. Dimoulas, Polychronis Tsipas, A. Sotiropoulos et al. · Applied Physics Letters · 2006 · 605 citations

Natural Sciences, Materials Science, Physics +17

Evidence for strong Fermi-level pinning due to metal-induced gap states at metal/germanium interface

Tomonori Nishimura, Koji Kita, Akira Toriumi · Applied Physics Letters · 2007 · 491 citations

Natural Sciences, Materials Engineering, Materials Science +17

Germanium MOS capacitors incorporating ultrathin high-/spl kappa/ gate dielectric

Chi On Chui, Shriram Ramanathan, B. B. Triplett et al. · IEEE Electron Device Letters · 2002 · 334 citations

Natural Sciences, Electrical Engineering, Materials Science +17

Distinctly different thermal decomposition pathways of ultrathin oxide layer on Ge and Si surfaces

K. Prabhakaran, Fumihiko Maeda, Yasushi Watanabe et al. · Applied Physics Letters · 2000 · 253 citations

Natural Sciences, Chemistry, Materials Science +17

Contributions to the effective work function of platinum on hafnium dioxide

J. Schaeffer, L. R. C. Fonseca, S. Samavedam et al. · Applied Physics Letters · 2004 · 197 citations

Natural Sciences, Materials Engineering, Materials Science +17