High frequency CV measurements of SiC MOS capacitors

Comparison of 6H-SiC, 3C-SiC, and Si for power devices

M. Bhatnagar, B. Jayant Baliga · IEEE Transactions on Electron Devices · 1993 · 1.1K citations

Semiconductor Technology, Electrical Engineering, Semiconductor Device +14

Silicon carbide high-power devices

C.E. Weitzel, John W. Palmour, C.H. Carter et al. · IEEE Transactions on Electron Devices · 1996 · 435 citations

Electrical Engineering, High Thermal Conductivity, Engineering +12

Advances in SiC MOS Technology

James A. Cooper · physica status solidi (a) · 1997 · 279 citations

Materials Science, Materials Engineering, Electrical Engineering +14

Band offsets and electronic structure of SiC/SiO2 interfaces

V. V. Afanas’ev, Gerhard Pensl, Max J. Schulz et al. · Journal of Applied Physics · 1996 · 266 citations

Materials Science, Diamond-like Carbon, Electrical Engineering +11

Improved oxidation procedures for reduced SiO2/SiC defects

Lori A. Lipkin, John W. Palmour · Journal of Electronic Materials · 1996 · 236 citations

Materials Science, Materials Engineering, Engineering +5