S. Berberich

High frequency characteristics and modelling of p-type 6H-silicon carbide MOS structures

J.F. Fernández, Philippe Godignon, S. Berberich et al. · Solid-State Electronics · 1996 · 45 citations

Materials Engineering, Electrical Engineering, Engineering +7

High frequency CV measurements of SiC MOS capacitors

S. Berberich, Philippe Godignon, Marie‐Laure Locatelli et al. · Solid-State Electronics · 1998 · 43 citations

Electrical Engineering, Engineering, Applied Physics +4

Growth of SiC films obtained by LPCVD

M.T. Clavaguera-Mora, J. Rodríguez‐Viejo, Z. El Felk et al. · Diamond and Related Materials · 1997 · 27 citations

Materials Science, Materials Engineering, Engineering +6

The electron irradiation effects on silicon gate dioxide used for power MOS devices

M. Bădilă, Ph. Godignon, José del R. Millán et al. · Microelectronics Reliability · 2001 · 26 citations

Electrical Engineering, Engineering, Electron Irradiation Effects +9

Acquisition concepts for Galileo BOC(2,2) signals in consideration of hardware limitations

Sven Fischer, André Guérin, S. Berberich · 2005 · 15 citations

Engineering, Measurement, Global Navigation Satellite System +19