M. Bădilă

Low-doped 6H-SiC n-type epilayers grown by sublimation epitaxy

N.S. Savkina, A. А. Lebedev, D. V. Davydov et al. · Materials Science and Engineering B · 2000 · 44 citations

Materials Engineering, Sublimation Epitaxy, Materials Science +5

Characterization of non-uniform Ni/4H-SiC Schottky diodes for improved responsivity in high-temperature sensing

Gheorghe Pristavu, Gheorghe Brezeanu, Razvan Pascu et al. · Materials Science in Semiconductor Processing · 2019 · 38 citations

High-temperature Sensing, Electrical Engineering, Engineering +6

Accurate modeling and parameter extraction for 6H-SiC Schottky barrier diodes (SBDs) with nearly ideal breakdown voltage

Gheorghe Brezeanu, M. Bădilă, Bogdan Tudor et al. · IEEE Transactions on Electron Devices · 2001 · 36 citations

Effective Edge Termination, Electrical Engineering, Engineering +11

Characterization technique for inhomogeneous 4H-SiC Schottky contacts: A practical model for high temperature behavior

Gheorghe Brezeanu, Gheorghe Pristavu, Florin Drăghici et al. · Journal of Applied Physics · 2017 · 30 citations

Engineering, Semiconductor Device, Practical Model +16

A model to non-uniform Ni Schottky contact on SiC annealed at elevated temperatures

Gheorghe Pristavu, Gheorghe Brezeanu, M. Bădilă et al. · Applied Physics Letters · 2015 · 28 citations

Engineering, Whole Contact Area, Schottky Contact Area +16