Improved post-cycling characteristic of FinFET NAND Flash

Abstract

In this paper, SONOS type FinFET device has been fabricated and characterized for the NAND flash application. Pre- and post-cycling characteristics are mainly studied both for the FinFET and planar device, with respect to the memory cell performance and device reliability. It has been demonstrated that the performance improvement of the FinFET is maintained after cycling stress, and most importantly, the superior bake retention characteristic of FinFET device is observed after cycling stress compared to the planar device