Characterization of Solid-Phase Epitaxially-Grown Silicon Films on SiO₂

Abstract

Lateral solid-phase epitaxial (L-SPE) films of vacuum-deposited Si on SiO 2 have been examined, mainly through TEM observation, and compared with (100) vertical solid-phase epitaxial (V-SPE) films. Typical defects in L-SPE layers with a rough growth front are high-density twins and dislocations, which are generated regardless of whether the films are <100> or <110> laterally-grown films. On the other hand, in V-SPE layers containing low-density short dislocations, {111} and {110} facets are formed at the <110> and <100> directed oxide window edges, respectively. The facets are thought to act as a barrier for the change from V-SPE to L-SPE across the SiO 2 edge. Successive 1050°C high-temperature heat treatment generates interstitial-type faulted and unfaulted dislocation loops in Si + ion implanted V-SPE layers. This is in contrast to the reduced dislocation density resulting in L-SPE layers containing no residual amorphous regions after the first 600°C annealing.