Ion implantation in group III-nitride semiconductors: a tool for doping and defect studies

Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes

Shuji Nakamura, Takashi Mukai, Masayuki Senoh · Applied Physics Letters · 1994 · 3.8K citations

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High dislocation densities in high efficiency GaN-based light-emitting diodes

S. D. Lester, F. A. Ponce, M. G. Craford et al. · Applied Physics Letters · 1995 · 961 citations

Engineering, Materials Engineering, Materials Science +17

High electron mobility transistor based on a GaN-Al<i>x</i>Ga1−<i>x</i>N heterojunction

M. Asif Khan, Amal R. Bhattarai, J. N. Kuznia et al. · Applied Physics Letters · 1993 · 874 citations

Engineering, Electrical Engineering, Materials Science +17

High-Power GaN P-N Junction Blue-Light-Emitting Diodes

Shuji Nakamura, Takashi Mukai, Masayuki Senoh · Japanese Journal of Applied Physics · 1991 · 835 citations

Engineering, Electrical Engineering, Materials Science +17

High-power InGaN single-quantum-well-structure blue and violet light-emitting diodes

Shuji Nakamura, Masayuki Senoh, Naruhito Iwasa et al. · Applied Physics Letters · 1995 · 596 citations

Engineering, Electrical Engineering, Materials Science +17