Technology Independent Large Signal Non Quasi-Static FET Models by Direct Construction from Automatically Characterized Device Data

Abstract

This paper describes a new, general and accurate, large signal GaAs FET model for nonlinear (e.g. harmonic balance) circuit simulation, its fast and unambiguous construction (model generation) by explicit calculations applied to the raw device data, and the adaptive, automated data acquisition system used to characterize the device. The model implementation in a harmonic balance simulator, the model generation procedure, and the automated data acquisition system form an efficient, practical, commercially available package. for state-of-the-art nonlinear circuit design.