Aluminum p-type doping of silicon carbide crystals using a modified physical vapor transport growth method

Site-competition epitaxy for superior silicon carbide electronics

David Larkin, Philip G. Neudeck, J. A. Powell et al. · Applied Physics Letters · 1994 · 317 citations

Materials Engineering, Semiconductors, Electrical Engineering +14

General principles of growing large-size single crystals of various silicon carbide polytypes

Yu. M. Tairov, V. F. Tsvetkov · Journal of Crystal Growth · 1981 · 242 citations

Materials Science, Materials Engineering, Engineering +9

SiC Seeded Crystal Growth

R Glass, D. Henshall, V. F. Tsvetkov et al. · physica status solidi (b) · 1997 · 116 citations

Engineering, Crystal Growth Technology, Wafer Scale Processing +16

Solubility of carbon in liquid Al and stability of Al4C3

Caian Qiu, R. Metselaar · Journal of Alloys and Compounds · 1994 · 92 citations · Full text

Materials Science, Liquid Al, Chemistry

Use of Ta-Container for Sublimation Growth and Doping of SiC Bulk Crystals and Epitaxial Layers

Yu. A. Vodakov, A. D. Roenkov, M.G. Ramm et al. · physica status solidi (b) · 1997 · 89 citations

Materials Science, Materials Engineering, Engineering +13