Roland Weingärtner

Determination of charge carrier concentration in <i>n</i>- and <i>p</i>-doped SiC based on optical absorption measurements

Roland Weingärtner, Peter J. Wellmann, Matthias Bickermann et al. · Applied Physics Letters · 2002 · 85 citations

Optical Materials, Engineering, Optical Wafer Mapping +16

Aluminum p-type doping of silicon carbide crystals using a modified physical vapor transport growth method

Thomas L. Straubinger, Matthias Bickermann, Roland Weingärtner et al. · Journal of Crystal Growth · 2002 · 59 citations

Materials Engineering, Materials Science, Engineering +7

Determination of the complex refractive index and optical bandgap of CH3NH3PbI3 thin films

J. A. Guerra, Alvaro Tejada, Lars Korte et al. · Journal of Applied Physics · 2017 · 54 citations

Optical Materials, Engineering, Halide Perovskites +21

Thermal activation, cathodo- and photoluminescence measurements of rare earth doped (Tm,Tb,Dy,Eu,Sm,Yb) amorphous/nanocrystalline AlN thin films prepared by reactive rf-sputtering

Roland Weingärtner, Oliver Erlenbach, A. Winnacker et al. · Optical Materials · 2005 · 52 citations

Materials Science, Aluminium Nitride, Engineering +9

On the preparation of vanadium doped PVT grown SiC boules with high semi-insulating yield

Matthias Bickermann, Roland Weingärtner, A. Winnacker · Journal of Crystal Growth · 2003 · 45 citations

Materials Engineering, Materials Science, High Semi-insulating Yield +5