Semiconductor Science and Technology · 2006 · 94 citations · 11 references
EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesVlsi DesignBipolar Junction TransistorsCmos Circuit DesignComplementary Metal-oxide-semiconductor TechnologyIntegrated Circuit DesignIntegrated Circuit DevicesIntegrated Circuit FabricationBicmos TechnologyCmos Fabrication ProcessesComplementary Metal-oxide-semiconductor DesignSige Bicmos Design
A 0.25 µm SiGe:C BiCMOS technology family (SG25H) with high-speed npn and pnp transistors for different performance requirements is presented. A CMOS-friendly integration scheme is realized by using collector wells, implanted after shallow trench formation, and avoiding deep trenches and extra collector sinkers. Three process variants are offered. The key bipolar transistor of the SG25H1 process is a 200 GHz npn device. The SG25H3 process offers three different types of npn HBTs. The performance ranges from fT/fmax /BVCEo values of 110 GHz/180 GHz/2.3 V for the high-speed (HS) device to 50 GHz/140 GHz/4.5 V for the medium voltage (MV) device and 30 GHz/80 GHz/6.5 V for the high-voltage (HV) transistor. The SG25H2 process provides in addition to npn transistors similar to those of SG25H1 and H3 a very high-speed SiGe:C pnp HBT with fT/fmax/BVCEo values of 90 GHz/120 GHz/2.8 V.
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Novel collector design for high-speed SiGe:C HBTs
B. Heinemann, H. Rücker, R. Barth et al. · 2003 · 107 citations
Engineering, Electrical Engineering, Electronic Materials +16
A complementary BiCMOS technology with high speed npn and pnp SiGe:C HBTs
B. Heinemann, R. Barth, D. Bolze et al. · 2004 · 48 citations
Engineering, Electrical Engineering, Electronic Materials +16