Bernd Tillack

Statistics

Publications

134

Citations

4.7K

H-Index

Active since

1986

Affiliations

Leibniz Institute for High Performance Microelectronics(Current)

Technische Universität Berlin

Institut für Solartechnologien (Germany)

Georgia Institute of Technology

Brandenburg University of Technology Cottbus-Senftenberg

Bernd Tillack is an author at Leibniz Institute for High Performance Microelectronics specializing in engineering, semiconductor devices, and electrical engineering.

Publications per year

1986–2021

134

Publications

134

Impact of Temperature on the Resistive Switching Behavior of Embedded $\hbox{HfO}_{2}$-Based RRAM Devices

Christian Walczyk, Damian Walczyk, Thomas Schroeder et al. · IEEE Transactions on Electron Devices · 2011 · 239 citations

Engineering, Electrical Engineering, Materials Science +17

SiGe HBT technology with f<inf>T</inf>/f<inf>max</inf> of 300GHz/500GHz and 2.0 ps CML gate delay

B. Heinemann, R. Barth, D. Bolze et al. · 2010 · 164 citations

Engineering, Electrical Engineering, Microelectronics +9

A 0.13 $\mu{\hbox {m}}$ SiGe BiCMOS Technology Featuring f$_{T} $/f$_{\max}$ of 240/330 GHz and Gate Delays Below 3 ps

H. Rücker, B. Heinemann, Wolfgang Winkler et al. · IEEE Journal of Solid-State Circuits · 2010 · 148 citations

Engineering, Electrical Engineering, Microelectronics +13

Low threading dislocation density Ge deposited on Si (100) using RPCVD

Y. Yamamoto, P. Zaumseil, T. Arguirov et al. · Solid-State Electronics · 2011 · 132 citations

Natural Sciences, Materials Engineering, Materials Science +12

A 820GHz SiGe chipset for terahertz active imaging applications

Erik Öjefors, Janus Grzyb, Yan Zhao et al. · 2011 · 111 citations

Engineering, Electrical Engineering, Microelectronics +11

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