Low threading dislocation density Ge deposited on Si (100) using RPCVD

Dislocation-free Stranski-Krastanow growth of Ge on Si(100)

D. J. Eaglesham, M. Cerullo · Physical Review Letters · 1990 · 2K citations

Natural Sciences, Materials Science, Physics +17

Controlling threading dislocation densities in Ge on Si using graded SiGe layers and chemical-mechanical polishing

M. T. Currie, Srikanth Samavedam, T. A. Langdo et al. · Applied Physics Letters · 1998 · 551 citations

Natural Sciences, Materials Engineering, Materials Science +17

Metal–semiconductor–metal near-infrared light detector based on epitaxial Ge/Si

Lorenzo Colace, G. Masini, Gaetano Assanto et al. · Applied Physics Letters · 1998 · 248 citations

Engineering, Electrical Engineering, Materials Science +17

Reduced pressure–chemical vapor deposition of Ge thick layers on Si(001) for 1.3–1.55-μm photodetection

Jean‐Michel Hartmann, Alexandra Abbadie, Anne‐Marie Papon et al. · Journal of Applied Physics · 2004 · 225 citations

Engineering, Materials Engineering, Materials Science +17

Metal-Semiconductor-Metal Near Infrared Light Detector Based on Epitaxial Ge on Si

Lorenzo Colace, G. Masini, F. Galluzzi et al. · Conference on Lasers and Electro-Optics Europe · 1998 · 204 citations

Engineering, Materials Engineering, Materials Science +17