D. Knoll

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Publications

Citations

1.7K

H-Index

Active since

1995

Affiliations

Leibniz Institute for High Performance Microelectronics(Current)

Institut für Solartechnologien (Germany)

Technische Universität Berlin

Centro Nacional de Microelectrónica

Universität Ulm

D. Knoll is an author at Leibniz Institute for High Performance Microelectronics specializing in electrical engineering, engineering, and semiconductor devices.

Publications per year

1995–2019

Publications

SiGe HBT technology with f<inf>T</inf>/f<inf>max</inf> of 300GHz/500GHz and 2.0 ps CML gate delay

B. Heinemann, R. Barth, D. Bolze et al. · 2010 · 164 citations

Engineering, Electrical Engineering, Microelectronics +9

Novel collector design for high-speed SiGe:C HBTs

B. Heinemann, H. Rücker, R. Barth et al. · 2003 · 107 citations

Engineering, Electrical Engineering, Electronic Materials +16

High-performance BiCMOS technologies without epitaxially-buried subcollectors and deep trenches

B. Heinemann, R. Barth, D. Knoll et al. · Semiconductor Science and Technology · 2006 · 94 citations

Engineering, Electrical Engineering, Microelectronics +12

A 0.13&#x00B5;m SiGe BiCMOS technology featuring f<inf>T</inf>/f<inf>max</inf> of 240/330 GHz and gate delays below 3 ps

H. Rücker, B. Heinemann, Wolfgang Winkler et al. · 2009 · 65 citations

Engineering, Electrical Engineering, Microelectronics +13

SiGe:C BiCMOS technology with 3.6 ps gate delay

H. Rücker, B. Heinemann, R. Barth et al. · 2004 · 56 citations

Engineering, Electrical Engineering, Electronic Materials +16

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