Publication | Closed Access
A flexible, low-cost, high performance SiGe:C BiCMOS process with a one-mask HBT module
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Citations
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References
2003
Year
Unknown Venue
Electrical EngineeringHbt DevicesEngineeringVlsi DesignDevice IntegrationHigh-frequency DeviceAdvanced Packaging (Semiconductors)High Performance SigeMixed-signal Integrated CircuitComputer ArchitectureComputer EngineeringMicroelectronicsCmos ProcessOne-mask Hbt ModuleC Bicmos Process
We demonstrate an extremely simple, flexible, and hence low-cost SiGe:C BiCMOS process with ample performance for the majority of high volume applications. This technology offers three HBT devices with f/sub T//BV/sub CEO/ values of 28 GHz/67 GHz/7.5 V; 52 GHz/98 GHz/3.8 V; and 75 GHz/ 90 GHz/2.4 V by adding only one mask to the underlying CMOS process.
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