Single-electron memory for giga-to-tera bit storage

Kazuo Yano, T. Ishii, T. Sano, +6

Proceedings of the IEEE

Electrical EngineeringEngineeringArray ArchitectureNanoelectronicsSingle-electron Memory +9

Hydrogen production by the partial oxidation and steam reforming of tar from hot coke oven gas

Masaki Onozaki, Kenji Watanabe, Takashi Hashimoto, +2

Fuel

Chemical EngineeringHydrogen ProductionGas ConversionEngineeringEnergy Conversion +9

Origin of Magnetic Anisotropy of Iron Films Evaporated at Oblique Incidence

Kunito Okamoto, Takashi Hashimoto, Kazuhiro Hara, +1

Journal of the Physical Society of Japan

EngineeringIron Films EvaporatedMagnetic ResonanceMagnetismElectron Microscopic Investigations +17

A 0.2-μm 180-GHz-f/sub max/ 6.7-ps-ECL SOI/HRS self-aligned SEG SiGe HBT/CMOS technology for microwave and high-speed digital applications

Katsuyoshi Washio, E. Ohue, H. Shimamoto, +7

IEEE Transactions on Electron Devices

EngineeringRadio FrequencyIntegrated CircuitsSemiconductor DeviceRf Semiconductor +14

Columnar structure and texture of iron films evaporated at oblique incidence

Takashi Hashimoto, K. Okamoto, Kazuhiro Hara, +2

Thin Solid Films

Materials ScienceSurface CharacterizationEngineeringPhysicsCorrosion +6

Transport characteristics of polycrystalline-silicon wire influenced by single-electron charging at room temperature

Kazuo Yano, Tomoyuki Ishii, Takashi Hashimoto, +3

Applied Physics Letters

EngineeringPeriodic PlateausCharge TransportSemiconductor DeviceSemiconductors +17

Columnar structure and texture of iron films prepared at various evaporation rates

K. Okamoto, Takashi Hashimoto, Kazuhiro Hara, +2

Thin Solid Films

Materials ScienceSurface CharacterizationVarious Evaporation RatesEngineeringCorrosion +4

Origin of Anomalous Magnetic Anisotropy of Iron Films Evaporated at Oblique Incidence

Kazuhiro Hara, Takashi Hashimoto, Eiji Tatsumoto

Journal of the Physical Society of Japan

Materials ScienceMagnetismFerromagnetismEngineeringPhysics +11

A 113mm2 32Gb 3b/cell NAND flash memory

T. Futatsuyama, Norihiro Fujita, Naoya Tokiwa, +33

Non-volatile MemoryElectrical EngineeringMemory ArchitectureEngineeringNand Flash Memories +13

A room-temperature single-electron memory device using fine-grain polycrystalline silicon

Kazuo Yano, T. Ishii, Takashi Hashimoto, +3

Non-volatile MemoryElectrical EngineeringElectronic DevicesSingle-electron Memory DeviceEngineering +13